| 1 |
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
Yamajo S, Yoon S, Liang J, Sodabanlu H, Watanabe K, Sugiyama M, Yasui A, Ikenaga E, Shigekawa N
Applied Surface Science, 473, 627, 2019 |
| 2 |
Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer
Tseng CY, Lee CT, Pchelyakov OP, Preobrazhenskii VV
Solar Energy, 118, 1, 2015 |
| 3 |
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding
Kim S, Geum DM, Park MS, Kim CZ, Choi WJ
Solar Energy Materials and Solar Cells, 141, 372, 2015 |
| 4 |
Self heating in Si0.5Ge0.5/Si and GaAs/Si thin film device structures
Zheng H, Jagannadham K
Solid-State Electronics, 99, 41, 2014 |
| 5 |
Magnetotransport properties and the annealing effect of (Ga,Mn)As/Si heterostructures and substrate-free (Ga,Mn)As films
Sato S, Osman MA, Jinbo Y, Uchitomi N
Applied Surface Science, 242(1-2), 134, 2005 |
| 6 |
Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100)
Mendez-Garcia VH, Perez-Centeno A, Lopez-Lopez M
Thin Solid Films, 433(1-2), 63, 2003 |
| 7 |
Growth and characterisation of InAs/InGaAs quantum dots like structure on GaAs/Si substrate by AP-MOCVD
Thilakan P, Kazi ZI, Egawa T
Applied Surface Science, 191(1-4), 196, 2002 |
| 8 |
Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures
Srnanek R, Gurnik P, Harmatha L, Gregora I
Applied Surface Science, 183(1-2), 86, 2001 |
| 9 |
Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application
Akahori K, Wang G, Okumura K, Soga T, Jimbo T, Umeno M
Solar Energy Materials and Solar Cells, 66(1-4), 593, 2001 |
| 10 |
A detailed study of H-2 plasma passivation effects on GaAs/Si solar cell
Wang G, Ogawa T, Soga T, Jimbo T, Umeno M
Solar Energy Materials and Solar Cells, 66(1-4), 599, 2001 |
