화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Finite element simulation of metal-semiconductor-metal photodetector
Guarino G, Donaldson WR, Mikulics M, Marso M, Kordos P, Sobolewski R
Solid-State Electronics, 53(10), 1144, 2009
2 Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy
Zhang YH, Lu LW, Zhang MH, Huang Q, Bao CL, Zhou JM
Journal of Crystal Growth, 220(4), 351, 2000
3 Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect an critical thickness
Carlin JA, Ringel SA, Sacks RN, Yap KS
Journal of Vacuum Science & Technology B, 16(3), 1372, 1998
4 Reflection high-energy electron diffraction during substrate rotation : A new dimension for in situ characterization
Braun W, Moller H, Zhang YH
Journal of Vacuum Science & Technology B, 16(3), 1507, 1998
5 (2X4)/C(2X8) to (4X2)/C(8X2) Transition on GaAs(001) Surfaces
Moriarty P, Benton PH, Ma YR, Dunn AW, Henini M, Woolf DA
Journal of Vacuum Science & Technology B, 14(2), 943, 1996
6 Antimony Doped GaAs - Role of the Isoelectronic Dopant in Defect Evolution
Paskova T, Valcheva E, Yakimova R
Journal of Vacuum Science & Technology B, 14(3), 1729, 1996
7 Control of the Fermi-Level Position on the GaAs(001) Surface - Se Passivation
Pashley MD, Li D
Journal of Vacuum Science & Technology A, 12(4), 1848, 1994