검색결과 : 7건
No. | Article |
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1 |
Finite element simulation of metal-semiconductor-metal photodetector Guarino G, Donaldson WR, Mikulics M, Marso M, Kordos P, Sobolewski R Solid-State Electronics, 53(10), 1144, 2009 |
2 |
Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy Zhang YH, Lu LW, Zhang MH, Huang Q, Bao CL, Zhou JM Journal of Crystal Growth, 220(4), 351, 2000 |
3 |
Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect an critical thickness Carlin JA, Ringel SA, Sacks RN, Yap KS Journal of Vacuum Science & Technology B, 16(3), 1372, 1998 |
4 |
Reflection high-energy electron diffraction during substrate rotation : A new dimension for in situ characterization Braun W, Moller H, Zhang YH Journal of Vacuum Science & Technology B, 16(3), 1507, 1998 |
5 |
(2X4)/C(2X8) to (4X2)/C(8X2) Transition on GaAs(001) Surfaces Moriarty P, Benton PH, Ma YR, Dunn AW, Henini M, Woolf DA Journal of Vacuum Science & Technology B, 14(2), 943, 1996 |
6 |
Antimony Doped GaAs - Role of the Isoelectronic Dopant in Defect Evolution Paskova T, Valcheva E, Yakimova R Journal of Vacuum Science & Technology B, 14(3), 1729, 1996 |
7 |
Control of the Fermi-Level Position on the GaAs(001) Surface - Se Passivation Pashley MD, Li D Journal of Vacuum Science & Technology A, 12(4), 1848, 1994 |