| 1 |
Nitridation and contrast of B4C/La interfaces and X-ray multilayer optics
Tsarfati T, van de Kruijs RWE, Zoethout E, Louis E, Bijkerk F
Thin Solid Films, 518(24), 7249, 2010 |
| 2 |
Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography
Tsarfati T, de Kruijs RWEV, Zoethout E, Louis E, Bijkerk F
Thin Solid Films, 518(5), 1365, 2009 |
| 3 |
Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry
Biswas A, Poswal AK, Tokas RB, Bhattacharyya D
Applied Surface Science, 254(11), 3347, 2008 |
| 4 |
Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates
Ohta J, Fujioka H, Takahashi H, Oshima M
Applied Surface Science, 190(1-4), 352, 2002 |
| 5 |
FT-IR-ATR study of depth profile of SiO2 ultra-thin films
Nagai N, Hashimoto H
Applied Surface Science, 172(3-4), 307, 2001 |
| 6 |
Growth behaviour of aluminium oxide in O-2 microwave plasma
Quade A, Wulff H
Materials Science Forum, 378-3, 557, 2001 |
| 7 |
Effects of PH3/H-2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells
Moon Y, Yoon E
Journal of Crystal Growth, 212(1-2), 61, 2000 |
