화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.30 on Si(001) as alternative gate dielectrics
Cosceev A, Muller-Sajak D, Pfnur H, Hofmann KR
Thin Solid Films, 518, S281, 2010
2 Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides
Contaret T, Touati B, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 51(4), 633, 2007
3 Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K
Materials Science Forum, 483, 829, 2005
4 Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements
Cheong KY, Dimitrijev S, Han J
Journal of Crystal Growth, 268(3-4), 547, 2004
5 Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot
Chiou YL, Gambino JP, Mohammad M
Solid-State Electronics, 45(10), 1787, 2001
6 Ultrathin oxynitride formation by low energy ion implantation
Khoueir A, Lu ZH, Ng WT, Ma Y
Journal of Vacuum Science & Technology A, 18(2), 724, 2000
7 Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge
Woodworth JR, Blain MG, Jarecki RL, Hamilton TW, Aragon BP
Journal of Vacuum Science & Technology A, 17(6), 3209, 1999
8 Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces
Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB
Journal of Vacuum Science & Technology B, 17(4), 1813, 1999
9 Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopy
Ludeke R, Schenk A
Journal of Vacuum Science & Technology B, 17(4), 1823, 1999
10 Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing
Trabzon L, Awadelkarim OO, Werking J
Journal of Vacuum Science & Technology B, 17(5), 2216, 1999