1 |
Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.30 on Si(001) as alternative gate dielectrics Cosceev A, Muller-Sajak D, Pfnur H, Hofmann KR Thin Solid Films, 518, S281, 2010 |
2 |
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides Contaret T, Touati B, Ghibaudo G, Boeuf F, Skotnicki T Solid-State Electronics, 51(4), 633, 2007 |
3 |
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama T, Watanabe T, Senzaki J, Kato M, Fukuda K, Shinohe T, Arai K Materials Science Forum, 483, 829, 2005 |
4 |
Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements Cheong KY, Dimitrijev S, Han J Journal of Crystal Growth, 268(3-4), 547, 2004 |
5 |
Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot Chiou YL, Gambino JP, Mohammad M Solid-State Electronics, 45(10), 1787, 2001 |
6 |
Ultrathin oxynitride formation by low energy ion implantation Khoueir A, Lu ZH, Ng WT, Ma Y Journal of Vacuum Science & Technology A, 18(2), 724, 2000 |
7 |
Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge Woodworth JR, Blain MG, Jarecki RL, Hamilton TW, Aragon BP Journal of Vacuum Science & Technology A, 17(6), 3209, 1999 |
8 |
Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB Journal of Vacuum Science & Technology B, 17(4), 1813, 1999 |
9 |
Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopy Ludeke R, Schenk A Journal of Vacuum Science & Technology B, 17(4), 1823, 1999 |
10 |
Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing Trabzon L, Awadelkarim OO, Werking J Journal of Vacuum Science & Technology B, 17(5), 2216, 1999 |