검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of carbon on the thermal stability of a Si atomic layer on Ge(100) Fujiu M, Takahashi K, Sakuraba M, Murota J Applied Surface Science, 224(1-4), 206, 2004 |
| 2 |
Si epitaxial growth on SiH3CH3 reacted Ge(100) and intermixing between Si and Ge during heat treatment Takahashi K, Fujiu M, Sakuraba M, Murota J Applied Surface Science, 212, 193, 2003 |
| 3 |
Surface reaction of CH3SiH3 on Ge(100) and Si(100) Takatsuka T, Fujiu M, Sakuraba M, Matsuura T, Murota J Applied Surface Science, 162, 156, 2000 |
| 4 |
Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction Ichikawa A, Hirose Y, Ikeda T, Noda T, Fujiu M, Takatsuka T, Moriya A, Sakuraba M, Matsuura T, Murota J Thin Solid Films, 369(1-2), 167, 2000 |