| 1 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
Journal of Crystal Growth, 507, 357, 2019 |
| 2 |
Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)
Machida R, Toda R, Fujikawa S, Hara S, Watanabe I, Fujishiro HI
Applied Surface Science, 351, 686, 2015 |
| 3 |
Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction
Fujikawa S, Taketsuru T, Tsuji D, Maeda T, Fujishiro HI
Journal of Crystal Growth, 425, 64, 2015 |
| 4 |
Selective growth of InSb on localized area of Si(100) by molecular beam epitaxy
Hara S, Iida T, Nishino Y, Uchida A, Horii H, Fujishiro HI
Journal of Crystal Growth, 323(1), 397, 2011 |
| 5 |
Nano-scale patterning on sulfur terminated GaAs (001) surface by scanning tunneling microscope
Yagishita Y, Toda Y, Hirai M, Fujishiro HI
Applied Surface Science, 237(1-4), 581, 2004 |
