| 1 |
Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
Fujikura H, Oshima Y, Megro T, Saito T
Journal of Crystal Growth, 350(1), 38, 2012 |
| 2 |
Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation
Negoro N, Fujikura H, Hasegawa H
Applied Surface Science, 159, 292, 2000 |
| 3 |
Formation of < 001 >-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl
Hamamatsu A, Kaneshiro C, Fujikura H, Hasegawa H
Journal of Electroanalytical Chemistry, 473(1-2), 223, 1999 |
| 4 |
Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates
Fujikura H, Kihara M, Hasegawa H
Thin Solid Films, 336(1-2), 22, 1998 |
| 5 |
Surface Passivation of In0.53Ga0.47As Ridge Quantum Wires Using Silicon Interface Control Layers
Fujikura H, Kodama S, Hashizume T, Hasegawa H
Journal of Vacuum Science & Technology B, 14(4), 2888, 1996 |
