화학공학소재연구정보센터
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No. Article
1 Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide
DeVittorio M, Coli G, Rinaldi R, Gigli G, Cingolani R, De Salvador D, Berti M, Drigo A, Fucilli F, Ligonzo T, Augelli V, Rizzi A, Lantier R, Freundt D, Luth H, Neubauer B, Gerthsen D
Solid-State Electronics, 44(3), 465, 2000
2 Microstructure, Vibrational and Electronic-Properties of GaN Grown by Molecular-Beam Epitaxy on Al2O3(0001) and 6H-SiC(0001)
Freundt D, Holz D, Luth H, Romani M, Rizzi A, Gerthsen D
Journal of Vacuum Science & Technology B, 15(4), 1121, 1997