검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Cordier Y, Comyn R, Tottereau O, Frayssinet E, Portail M, Nemoz M Journal of Crystal Growth, 507, 220, 2019 |
| 2 |
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors Latrach S, Frayssinet E, Defrance N, Chenot S, Cordier Y, Gaquiere C, Maaref H Current Applied Physics, 17(12), 1601, 2017 |
| 3 |
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Cordier Y, Damilano B, Aing P, Chaix C, Linez F, Tuomisto F, Vennegues P, Frayssinet E, Lefebvre D, Portail M, Nemoz M Journal of Crystal Growth, 433, 165, 2016 |
| 4 |
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D Journal of Crystal Growth, 398, 23, 2014 |
| 5 |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A Journal of Crystal Growth, 338(1), 20, 2012 |
| 6 |
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters Vennegues P, Diaby BS, Kim-Chauveau H, Bodiou L, Schenk HPD, Frayssinet E, Martin RW, Watson IM Journal of Crystal Growth, 353(1), 108, 2012 |
| 7 |
Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition Schenk HPD, Frayssinet E, Bayard A, Rondi D, Cordier Y, Kennard M Journal of Crystal Growth, 314(1), 85, 2011 |
| 8 |
Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F Journal of Crystal Growth, 312(19), 2683, 2010 |
| 9 |
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Cordier Y, Hugues M, Semond F, Natali F, Lorenzini P, Bougrioua Z, Massies J, Frayssinet E, Beaumont B, Gibart P, Faurie JP Journal of Crystal Growth, 278(1-4), 383, 2005 |
| 10 |
Free-standing GaN grown on epitaxial lateral overgrown GaN substrates Martinez-Criado G, Kuball M, Benyoucef M, Sarua A, Frayssinet E, Beaumont B, Gibart P, Miskys CR, Stutzmann M Journal of Crystal Growth, 255(3-4), 277, 2003 |