검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M Applied Surface Science, 328, 120, 2015 |
| 2 |
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M Applied Surface Science, 357, 530, 2015 |
| 3 |
GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 mu m Richter J, Strassner J, Loeber TH, Fouckhardt H, Nowozin T, Bonato L, Bimberg D, Braam D, Lorke A Journal of Crystal Growth, 404, 48, 2014 |
| 4 |
Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers Hoffmann G, Schimper HJ, Schwender C, Herhammer N, West GF, Vogelgesang B, Drumm JO, Fouckhardt H, Scheib M Journal of Crystal Growth, 257(1-2), 42, 2003 |
| 5 |
Deep dry etching of GaAs and GaSb using Cl-2/Ar plasma discharges Giehl AR, Gumbel M, Kessler M, Herhammer N, Hoffmann G, Fouckhardt H Journal of Vacuum Science & Technology B, 21(6), 2393, 2003 |
| 6 |
Technology and realization of metallic curved waveguide mirrors in polymer film waveguides based on anisotropic plasma etching Wolff S, Grosse A, Schimper HJ, Giehl AR, Kuhnke M, Grote R, Fouckhardt H Journal of Vacuum Science & Technology A, 19(1), 87, 2001 |