화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 The influence of initial stoichiometry on the mechanism of photochromism of molybdenum oxide amorphous films
Rouhani M, Hobley J, Subramanian GS, Phang IY, Foo YL, Gorelik S
Solar Energy Materials and Solar Cells, 126, 26, 2014
2 Photochromism of amorphous molybdenum oxide films with different initial Mo5+ relative concentrations
Rouhani M, Foo YL, Hobley J, Pan JS, Subramanian GS, Yu XJ, Rusydi A, Gorelik S
Applied Surface Science, 273, 150, 2013
3 Interface and Surface Cation Stoichiometry Modified by Oxygen Vacancies in Epitaxial Manganite Films
Li ZP, Bosman M, Yang Z, Ren P, Wang L, Cao L, Yu XJ, Ke C, Breese MBH, Rusydi A, Zhu WG, Dong ZL, Foo YL
Advanced Functional Materials, 22(20), 4312, 2012
4 Temperature-dependent phase separation during annealing of Ge2Sb2Te5 thin films in vacuum
Zhang Z, Pan JS, Fang LWW, Yeo YC, Foo YL, Zhao R, Shi LP, Tok ES
Applied Surface Science, 258(16), 6075, 2012
5 Temperature dependent photoluminescence studies of ZnO thin film grown on (111) YSZ substrate
Sentosa D, Liu B, Wong LM, Lim YV, Wong TI, Foo YL, Sun HD, Wang SJ
Journal of Crystal Growth, 319(1), 8, 2011
6 Mimicking Both Petal and Lotus Effects on a Single Silicon Substrate by Tuning the Wettability of Nanostructured Surfaces
Dawood MK, Zheng H, Liew TH, Leong KC, Foo YL, Rajagopalan R, Khan SA, Choi WK
Langmuir, 27(7), 4126, 2011
7 Activation of phosphorous doping in high quality ZnO thin film grown on Yttria-stabilized zirconia (111) by thermal treatment
Sentosa D, Liu B, Wong LM, Lim YV, Wong TI, Foo YL, Sun HD, Wang SJ
Thin Solid Films, 520(3), 994, 2011
8 Effective method for preparation of oxide-free Ge2Sb2Te5 surface: An X-ray photoelectron spectroscopy study
Zhang Z, Pan JS, Foo YL, Fang LWW, Yeo YC, Zhao R, Shi LP, Chong TC
Applied Surface Science, 256(24), 7696, 2010
9 Multiwalled carbon nanotubes beaded with ZnO nanoparticles for ultrafast nonlinear optical switching
Zhu YW, Elim HI, Foo YL, Yu T, Liu YJ, Ji W, Lee JY, Shen ZX, Wee ATS, Thong JTL, Sow CH
Advanced Materials, 18(5), 587, 2006
10 Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure
Gao F, Lee SJ, Balakumar S, Du AY, Foo YL, Kwong DL
Thin Solid Films, 504(1-2), 69, 2006