검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid Qiao L, Shougee A, Albrecht T, Fobelets K Electrochimica Acta, 210, 32, 2016 |
| 2 |
n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation Xu B, Li CB, Myronov M, Fobelets K Solid-State Electronics, 83, 107, 2013 |
| 3 |
Terahertz imaging using strained-Si MODFETs as sensors Meziani YM, Garcia-Garcia E, Velazquez-Perez JE, Coquillat D, Dyakonova N, Knap W, Grigelionis I, Fobelets K Solid-State Electronics, 83, 113, 2013 |
| 4 |
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors Fobelets K, Rumyantsev SL, Hackbarth T, Shur MS Solid-State Electronics, 53(6), 626, 2009 |
| 5 |
A novel 3D embedded gate field effect transistor - Screen-grid FET -Device concept and modelling Fobelets K, Ding PW, Velazquez-Perez JE Solid-State Electronics, 51(5), 749, 2007 |
| 6 |
SiGeHMOSFET monolithic inverting current mirror Michelakis K, Despotopoulos S, Papavassiliou C, Vilches A, Fobelets K, Toumazou C Solid-State Electronics, 49(4), 591, 2005 |
| 7 |
SiGe virtual substrate HMOS transistor for analogue applications Michelakis K, Despotopoulos S, Gaspari V, Vilches A, Fobelets K, Papavassiliou C, Toumazou C, Zhang J Applied Surface Science, 224(1-4), 386, 2004 |
| 8 |
Effect of temperature on the transfer characteristic of a 0.5 mu m-gate Si : SiGe depletion-mode n-MODFET Gaspari V, Fobelets K, Velazquez-Perez JE, Ferguson R, Michelakis K, Despotopoulos S, Papavassilliou C Applied Surface Science, 224(1-4), 390, 2004 |
| 9 |
Comparison of sub-micron Si : SiGe heterojunction nFETs to Si nMOSFET in present-day technologies Fobelets K, Jeamsaksiri W, Papavasilliou C, Vilches T, Gaspari V, Velazquez-Perez JE, Michelakis K, Hackbarth T, Konig U Solid-State Electronics, 48(8), 1401, 2004 |
| 10 |
Buried-channel SiGe HMODFET device potential for micropower applications Vilches A, Michelakis K, Fobelets K, Haigh D, Papavassiliou C, Hackbath T, Konig U Solid-State Electronics, 48(8), 1423, 2004 |