검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation Khandelwal S, Goyal N, Fjeldly TA Solid-State Electronics, 79, 22, 2013 |
| 2 |
A charge-based capacitance model for AlGaAs/GaAs HEMTs Khandelwal S, Yigletu FM, Iniguez B, Fjeldly TA Solid-State Electronics, 82, 38, 2013 |
| 3 |
A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices Khandelwal S, Fjeldly TA Solid-State Electronics, 76, 60, 2012 |
| 4 |
Capacitance modeling of short-channel double-gate MOSFETs Borli H, Kolberg S, Fjeldly TA Solid-State Electronics, 52(10), 1486, 2008 |
| 5 |
Analysis of the anomalous drain current characteristics of halo MOSFETs Koo H, Lee K, Lee K, Fjeldly TA, Shur MS Solid-State Electronics, 47(1), 99, 2003 |