화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Drawing up a collaborative contract: Amino acid cross-feeding between interspecies bacterial pairs
Kelly EE, Fischer AM, Collins CH
Biotechnology and Bioengineering, 118(8), 3138, 2021
2 Temperature dependence of GaSb and AlGaSb solar cells
Vadiee E, Fang Y, Zhang CM, Fischer AM, Williams JJ, Renteria EJ, Balakrishnan G, Honsberg CB
Current Applied Physics, 18(6), 752, 2018
3 Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow
Wang S, Li XH, Fischer AM, Detchprohm T, Dupuis RD, Ponce FA
Journal of Crystal Growth, 475, 334, 2017
4 A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions
Clinton EA, Vadiee E, Fabien CAM, Moseley MW, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA
Solid-State Electronics, 136, 3, 2017
5 Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition
Li XH, Wei YO, Wang S, Xie HG, Mao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA
Journal of Crystal Growth, 414, 76, 2015
6 Low-temperature growth of InGaN films over the entire composition range by MBE
Fabien CAM, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA
Journal of Crystal Growth, 425, 115, 2015
7 High growth speed of gallium nitride using ENABLE-MBE
Williams JJ, Fischer AM, Williamson TL, Gangam S, Faleev NN, Hoffbauer MA, Honsberg CB
Journal of Crystal Growth, 425, 129, 2015
8 Hyperbranched poly(glycolide) copolymers with glycerol branching points via ring-opening copolymerization
Fischer AM, Schull C, Frey H
Polymer, 72, 436, 2015
9 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 137, 2014
10 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 143, 2014