검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Quantum engineering of transistors based on 2D materials heterostructures Iannaccone G, Bonaccorso F, Colombo L, Fiori G Nature Nanotechnology, 13(3), 183, 2018 |
| 2 |
Quantum engineering of transistors based on 2D materials heterostructures (vol 13, pg 520, 2018) Iannaccone G, Bonaccorso F, Colombo L, Fiori G Nature Nanotechnology, 13(6), 520, 2018 |
| 3 |
The prospects of transition metal dichalcogenides for ultimately scaled CMOS Thiele S, Kinberger W, Granzner R, Fiori G, Schwierz F Solid-State Electronics, 143, 2, 2018 |
| 4 |
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures McManus D, Vranic S, Withers F, Sanchez-Romaguera V, Macucci M, Yang HF, Sorrentino R, Parvez K, Son SK, Iannaccone G, Kostarelos K, Fiori G, Casiraghi C Nature Nanotechnology, 12(4), 343, 2017 |
| 5 |
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials Iannaccone G, Zhang Q, Bruzzone S, Fiori G Solid-State Electronics, 115, 213, 2016 |
| 6 |
Electronics based on two-dimensional materials Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L Nature Nanotechnology, 9(10), 768, 2014 |
| 7 |
Electronics based on two-dimensional materials (vol 9, pg 768, 2014) Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L Nature Nanotechnology, 9(12), 1063, 2014 |
| 8 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J Solid-State Electronics, 53(12), 1293, 2009 |
| 9 |
Electroreduction of volatile organic halides on activated silver cathodes Fiori G, Rondinini S, Sello G, Vertova A, Cirja M, Conti L Journal of Applied Electrochemistry, 35(4), 363, 2005 |
| 10 |
Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit Curatola G, Fiori G, Iannaccone G Solid-State Electronics, 48(4), 581, 2004 |