검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth Park JS, Curtin M, Hydrick JM, Bai J, Li JT, Cheng Z, Carroll M, Fiorenza JG, Lochtefeld A Electrochemical and Solid State Letters, 12(4), H142, 2009 |
| 2 |
Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping Li JZ, Bai J, Hydrick JM, Park JS, Major C, Carroll M, Fiorenza JG, Lochtefeld A Journal of Crystal Growth, 311(11), 3133, 2009 |
| 3 |
Fabrication of Low-Defectivity, Compressively Strained Ge on Si0.2Ge0.8 Structures Using Aspect Ratio Trapping Park JS, Curtin M, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A Journal of the Electrochemical Society, 156(4), H249, 2009 |
| 4 |
Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping Li JZ, Hydrick JM, Park JS, Li J, Bai J, Cheng ZY, Carroll M, Fiorenza JG, Lochtefeld A, Chan W, Shellenbarger Z Journal of the Electrochemical Society, 156(7), H574, 2009 |
| 5 |
Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping Park JS, Curtin M, Hydrick JM, Carroll M, Fiorenza JG, Lochtefeld A, Novak S Journal of Vacuum Science & Technology B, 26(5), 1740, 2008 |
| 6 |
Strained Si on insulator technology: from materials to devices Langdo TA, Currie MT, Cheng ZY, Fiorenza JG, Erdtmann M, Braithwaite G, Leitz CW, Vineis C, Carlin JA, Lochtefeld A, Bulsara MT, Lauer I, Antoniadis DA, Somerville M Solid-State Electronics, 48(8), 1357, 2004 |