화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 The Band Gap of BaPrO3 Studied by Optical and Electrical Methods
Schrade M, Magraso A, Galeckas A, Finstad TG, Norby T
Journal of the American Ceramic Society, 99(2), 492, 2016
2 Bi-stable pore size during electrochemical etching of n-type silicon during a thermal ramp
Kan PYY, Finstad TG
Thin Solid Films, 515(13), 5241, 2007
3 Scanning probe measurements on luminescent Si nanoclusters in SiO2 films
Mayandi J, Finstad TG, Thogersen A, Foss S, Serincan U, Turan R
Thin Solid Films, 515(16), 6375, 2007
4 Growth of Ge nanoparticles on SiO2/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
Foss S, Finstad TG, Dana A, Aydinli A
Thin Solid Films, 515(16), 6381, 2007
5 On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si
Diplas S, Ulyashin A, Maknys K, Gunnaes AE, Jorgensen S, Wright D, Watts JF, Olsen A, Finstad TG
Thin Solid Films, 515(24), 8539, 2007
6 Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures
Tetelbaum DI, Gorshkov ON, Ershov AV, Kasatkin AP, Kamin VA, Mikhaylov AN, Belov AI, Gaponova DM, Pavesi L, Ferraioli L, Finstad TG, Foss S
Thin Solid Films, 515(1), 333, 2006
7 The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect
Heng CL, Liu YJ, Wee ATS, Finstad TG
Journal of Crystal Growth, 262(1-4), 95, 2004
8 In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces
Chen LC, Caldwell DA, Finstad TG, Palmstrom CJ
Journal of Vacuum Science & Technology A, 17(4), 1307, 1999