검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor Feron O, Sugiyama M, Asawamethapant W, Futakuchi N, Feurprier Y, Nakano Y, Shimogaki Y Applied Surface Science, 159, 318, 2000 |
| 2 |
High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether Chinzei Y, Feurprier Y, Ozawa M, Kikuchi T, Horioka K, Ichiki T, Horiike Y Journal of Vacuum Science & Technology A, 18(1), 158, 2000 |
| 3 |
Microloading effect in ultrafine SiO2 hole/trench etching Feurprier Y, Chinzei Y, Ogata M, Kikuchi T, Ozawa M, Ichiki T, Horiike Y Journal of Vacuum Science & Technology A, 17(4), 1556, 1999 |
| 4 |
Proposal for an etching mechanism of InP in CH4-H-2 mixtures based on plasma diagnostics and surface analysis Feurprier Y, Cardinaud C, Grolleau B, Turban G Journal of Vacuum Science & Technology A, 16(3), 1552, 1998 |
| 5 |
Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma Chinzei Y, Ichiki T, Ikegami N, Feurprier Y, Shindo H, Horiike Y Journal of Vacuum Science & Technology B, 16(3), 1043, 1998 |
| 6 |
X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4-H-2 plasmas Feurprier Y, Cardinaud C, Turban G Journal of Vacuum Science & Technology B, 16(4), 1823, 1998 |
| 7 |
Reduction of Recombination Velocity on GaAs Surface by Ga-S and as-S Bond-Related Surface-States from (NH4)(2)S-X Treatment Sik H, Feurprier Y, Cardinaud C, Turban G, Scavennec A Journal of the Electrochemical Society, 144(6), 2106, 1997 |
| 8 |
Influence of the Gas-Mixture on the Reactive Ion Etching of InP in CH4-H-2 Plasmas Feurprier Y, Cardinaud C, Turban G Journal of Vacuum Science & Technology B, 15(5), 1733, 1997 |