| 1 |
Effect of atomic passivation at Ni-MoS2 interfaces on contact behaviors
Kim J, Choi CG, Min KA, Cho K, Hong S
Current Applied Physics, 20(1), 132, 2020 |
| 2 |
Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
Li H, Martinelli L, Cadiz F, Bendounan A, Arscott S, Sirotti F, Rowe ACH
Applied Surface Science, 478, 284, 2019 |
| 3 |
Electronic structure and Fermi-level pinning of indigo for application in environment-friendly devices
Lee H, Jeong J, Yi Y, Lee H
Applied Surface Science, 484, 808, 2019 |
| 4 |
Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts
Mikolasek M, Frohlich K, Husekova K, Racko J, Rehacek V, Chymo F, Tapajna M, Harmatha L
Applied Surface Science, 461, 48, 2018 |
| 5 |
Enhanced plasmon-mediated photo-assisted hydrogen evolution on silicon by interfacial modification
Bouabadi B, Aggour M, Lewerenz HJ, Lublow M
Journal of Applied Electrochemistry, 47(4), 457, 2017 |
| 6 |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
Tsui BY, Cheng JC, Yen CT, Lee CY
Solid-State Electronics, 133, 83, 2017 |
| 7 |
Cd-1 _ S-x:B/CuInSe2 interface of thin film solar cells improved with iodine passivation
Cheng YS, Wang NF, Tsai YZ, Liu HP, Leng CT, Houng MP
Thin Solid Films, 627, 26, 2017 |
| 8 |
Effect of open-circuit voltage in organic solar cells based on various electron donor materials by inserting molybdenum trioxide anode buffer layer
Ke JC, Wang YH, Chen KL, Huang CJ
Solar Energy Materials and Solar Cells, 133, 248, 2015 |
| 9 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai JH, Liu WC
Solid-State Electronics, 105, 45, 2015 |
| 10 |
Fermi Level Pinning and Orbital Polarization Effects in Molecular Junctions: The Role of Metal Induced Gap States
Van Dyck C, Geskin V, Cornil J
Advanced Functional Materials, 24(39), 6154, 2014 |
