검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias Felsl HP, Wachutka G Materials Science Forum, 389-3, 1153, 2002 |
| 2 |
The electrothermal behavior of 4H-SiC Schottky diodes at forward bias considering single pulse and pulsed current operation Felsl HP, Wachutka G, Rupp R Materials Science Forum, 433-4, 839, 2002 |