화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm
Bugge F, Bege R, Blume G, Feise D, Sumpf B, Werner N, Zeimer U, Paschke K, Weyers M
Journal of Crystal Growth, 491, 31, 2018
2 Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion
Bugge F, Paschke K, Blume G, Feise D, Zeimer U, Weyers M
Journal of Crystal Growth, 414, 205, 2015
3 Epitaxy of multimodal InAs/GaAs quantum dot ensembles
Potschke K, Feise D, Pohl UW, Bimberg D
Journal of Crystal Growth, 298, 567, 2007