검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Cordier Y, Hugues M, Semond F, Natali F, Lorenzini P, Bougrioua Z, Massies J, Frayssinet E, Beaumont B, Gibart P, Faurie JP Journal of Crystal Growth, 278(1-4), 383, 2005 |
| 2 |
Raman study of Zn1-xBexSe/GaAs systems with low Be-content (x <= 0.31) Ajjoun M, Pages O, Laurenti JP, Bormann D, Chauvet C, Tournie E, Faurie JP, Gorochov O Thin Solid Films, 403-404, 530, 2002 |
| 3 |
LO phonon-plasmon coupling in N-doped Zn1-xBexSe/GaAs (x <= 0.15) Ajjoun M, Pages O, Laurenti JP, Bormann D, Chauvet C, Tournie E, Faurie JP Thin Solid Films, 403-404, 535, 2002 |
| 4 |
Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy Tournie E, Vigue F, Laugt M, Faurie JP Journal of Crystal Growth, 223(4), 461, 2001 |
| 5 |
Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001) Chauvet C, Tournie E, Faurie JP Journal of Crystal Growth, 214, 95, 2000 |
| 6 |
Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N Tournie E, Pelletier H, Neu G, Theys B, Lusson A, Teisseire M, Chauvet C, Faurie JP Journal of Crystal Growth, 214, 507, 2000 |