화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A)
Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L
Solid-State Electronics, 125, 189, 2016
2 Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)
Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M
Solid-State Electronics, 125, 198, 2016
3 Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B
Solid-State Electronics, 58(1), 62, 2011
4 Carbon-doped GeTe: A promising material for Phase-Change Memories
Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F
Solid-State Electronics, 65-66, 197, 2011
5 Investigation of self-assembled InP-GaInP quantum dot stacks by transmission electron microscopy
Fantini A, Phillipp F, Kohler C, Porsche J, Scholz F
Journal of Crystal Growth, 244(2), 129, 2002