| 1 |
Investigation of defect creation in GaP/Si(001) epitaxial structures
Zhang CM, Boley A, Faleev N, Smith DJ, Honsberg CB
Journal of Crystal Growth, 503, 36, 2018 |
| 2 |
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II-Transmission electron microscopy and atomic force microscopy
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C
Journal of Crystal Growth, 365, 35, 2013 |
| 3 |
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I-High-resolutionx-ray diffraction and x-ray topography
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C
Journal of Crystal Growth, 365, 44, 2013 |
| 4 |
All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides
Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S
Journal of Crystal Growth, 378, 631, 2013 |
| 5 |
Growth and characterization of GaAs1-xSbx barrier layers for advanced concept solar cells
Bremner SP, Liu GM, Faleev N, Ghosh K, Honsberg CB
Journal of Vacuum Science & Technology B, 26(3), 1149, 2008 |
| 6 |
Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects
Faleev N, Honsberg C, Jani O, Ferguson I
Journal of Crystal Growth, 300(1), 246, 2007 |
