화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 In-situ decomposition and etching of AIN and GaN in the presence of HCI
Fahle D, Kruecken T, Dauelsberg M, Kalisch H, Heuken M, Vescan A
Journal of Crystal Growth, 393, 89, 2014
2 HCl-assisted growth of GaN and AlN
Fahle D, Brien D, Dauelsberg M, Strauch G, Kalisch H, Heuken M, Vescan A
Journal of Crystal Growth, 370, 30, 2013
3 On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 315(1), 220, 2011
4 Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 315(1), 246, 2011