검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Pre-doping effects on Ni fully silicided metal gate on SiO2 dielectric Wang BM, Ru GP, Jiang YL, Qu XP, Li BZ, Liu R Applied Surface Science, 255(5), 1744, 2008 |
| 2 |
Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S Solid-State Electronics, 52(9), 1303, 2008 |
| 3 |
Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-kappa dielectrics Srinivasan P, Simoen E, Singanamalla R, Yu HY, Claeys C, Misra D Solid-State Electronics, 50(6), 992, 2006 |