화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 Integration of ZnO nanowires in gated field emitter arrays for large-area vacuum microelectronics applications
Zhao L, Chen YX, Liu YM, Zhang GF, She JC, Deng SZ, Xu NS, Chen J
Current Applied Physics, 17(1), 85, 2017
2 Extremely environment-hard and low work function transfer-mold field emitter arrays
Nakamoto M, Moon J
Applied Surface Science, 275, 178, 2013
3 Fabrication of Nanometer-Scale Si Field Emitters Using Self-Assembled Ge Nanomasks
Lee SW, Wu BL, Chang HT
Journal of the Electrochemical Society, 157(2), H174, 2010
4 640x480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target
Nanba M, Takiguchi Y, Honda Y, Hirano Y, Watabe T, Egami N, Miya K, Nakamura K, Taniguchi M, Itoh S, Kobayashi A
Journal of Vacuum Science & Technology B, 28(1), 96, 2010
5 Numerical simulations on capture area of gas molecules for high brightness gas field ion source
Sugiyama Y, Kobayashi Y, Morikawa Y, Kajiwara K, Hata K
Journal of Vacuum Science & Technology B, 28(2), C2A83, 2010
6 Low work function nanometer-order controlled transfer mold field-emitter arrays
Nakamoto M, Moon J, Shiratori K
Journal of Vacuum Science & Technology B, 28(2), C2B1, 2010
7 Efficient high-current field emission from arrays of carbon nanotube columns
Navitski A, Muller G, Sakharuk V, Prudnikava AL, Shulitski BG, Labunov VA
Journal of Vacuum Science & Technology B, 28(2), C2B14, 2010
8 Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication
Yoshida T, Nagao M, Kanemaru S
Journal of Vacuum Science & Technology B, 28(2), C2C1, 2010
9 Flexible carbon nanotube-array cathodes: Fabrication and bending effect on field-electron emission
Hong NT, Koh KH, Lee S, Ngo TTT, Phan NM
Journal of Vacuum Science & Technology B, 28(2), C2C5, 2010
10 Study of techniques for improving emission uniformity of gated CuO nanowire field emitter arrays
Zhan RZ, Chen J, Deng SZ, Xu NS
Journal of Vacuum Science & Technology B, 28(2), C2C45, 2010