검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A Solid-State Electronics, 150, 1, 2018 |
| 2 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
| 3 |
Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET Anvarifard MK, Orouji AA Solid-State Electronics, 103, 154, 2015 |
| 4 |
Characterization and modeling of capacitances in FD-SOI devices Ben Akkez I, Cros A, Fenouillet-Beranger C, Perreau P, Margain A, Boeuf F, Balestra F, Ghibaudo G Solid-State Electronics, 71, 53, 2012 |
| 5 |
Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology Kim SH, Fossum JG Solid-State Electronics, 49(4), 595, 2005 |
| 6 |
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication Shim J, Oh H, Choi H, Sakaguchi T, Kurino H, Koyanagi M Applied Surface Science, 224(1-4), 260, 2004 |
| 7 |
A process/physics-based compact model for nonclassical CMOS device and circuit design Fossum JG, Ge L, Chiang MH, Trivedi VP, Chowdhury MM, Mathew L, Workman GO, Nguyen BY Solid-State Electronics, 48(6), 919, 2004 |