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| No. | Article |
|---|---|
| 1 |
Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout Hsu HW, Lee CC Solid-State Electronics, 138, 113, 2017 |
| No. | Article |
|---|---|
| 1 |
Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout Hsu HW, Lee CC Solid-State Electronics, 138, 113, 2017 |