검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Digital and analog TFET circuits: Design and benchmark Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L Solid-State Electronics, 146, 50, 2018 |
| 2 |
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits Strangio S, Palestri P, Lanuzza M, Esseni D, Crupi F, Selmi L Solid-State Electronics, 128, 37, 2017 |
| 3 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
| 4 |
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides Cao J, Cresti A, Esseni D, Pala M Solid-State Electronics, 116, 1, 2016 |
| 5 |
The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L Solid-State Electronics, 108, 90, 2015 |
| 6 |
Universal analytic model for tunnel FET circuit simulation Lu H, Esseni D, Seabaugh A Solid-State Electronics, 108, 110, 2015 |
| 7 |
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors Pittino F, Palestri P, Scarbolo P, Esseni D, Selmi L Solid-State Electronics, 98, 63, 2014 |
| 8 |
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs Conzatti F, Pala MG, Esseni D, Bano E Solid-State Electronics, 88, 49, 2013 |
| 9 |
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model Bresciani M, Palestri P, Esseni D, Selmi L, Szafranek B, Neumaier D Solid-State Electronics, 89, 161, 2013 |
| 10 |
Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons Bresciani M, Palestri P, Esseni D, Selmi L Solid-State Electronics, 54(9), 1015, 2010 |