| 1 |
Parameterization of HAXPES photoelectrons with kinetic energies up to 10 keV
Jablonski A
Applied Surface Science, 346, 503, 2015 |
| 2 |
Probability of ionization of sputtered particles as a function of their energy - Part I: Negative Si- ions
Kudriavtsev Y, Villegas A, Gallardo S, Asomoza R
Applied Surface Science, 254(7), 2059, 2008 |
| 3 |
Study of the L-2,L-3 edges of 3d transition metals by X-ray absorption spectroscopy
Akgul G, Aksoy F, Bozduman A, Ozkendir OM, Ufuktepe Y, Luning J
Thin Solid Films, 517(2), 1000, 2008 |
| 4 |
Experimental and theoretical studies on X-ray induced secondary electron yields in Ti and TiO2
Iyasu T, Tamura K, Shimizu R, Vlaicu MA, Yoshikawa H
Applied Surface Science, 252(12), 4335, 2006 |
| 5 |
Investigation of the depth range through ultra-thin carbon films on magnetic layers by time-of-flight secondary ion mass spectrometry
Tadokoro N, Yuki M, Osakabe K
Applied Surface Science, 203, 72, 2003 |
| 6 |
Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides
Nohira H, Hirose K, Takahashi K, Hattori T
Applied Surface Science, 162, 304, 2000 |
