화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Navas J, Araujo D, Piner JC, Sanchez-Coronilla A, Blanco E, Villar P, Alcantara R, Montserrat J, Florentin M, Eon D, Pernot J
Applied Surface Science, 433, 408, 2018
2 Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Pinero JC, Araujo D, Fiori A, Traore A, Villar MP, Eon D, Muret P, Pernot J, Teraji T
Applied Surface Science, 395, 200, 2017
3 New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements
Gudovskikh AS, Chouffot R, Kleider JP, Kaluzhniy NA, Lantratov VM, Mintairov SA, Damon-Lacoste J, Eon D, Cabarrocas PRI, Ribeyron PJ
Thin Solid Films, 516(20), 6786, 2008
4 Etch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma
Eon D, Damon M, Chevolleaua T, David T, Vallier L, Joubert O
Journal of Vacuum Science & Technology B, 25(3), 715, 2007
5 Etching characteristics of TiN used as hard mask in dielectric etch process
Darnon M, Chevolleau T, Eon D, Vallier L, Torres J, Joubert O
Journal of Vacuum Science & Technology B, 24(5), 2262, 2006
6 Plasma oxidation of polyhedral oligomeric silsesquioxane polymers
Eon D, Raballand V, Cartry G, Cardinaud C, Vourdas N, Argitis P, Gogolides E
Journal of Vacuum Science & Technology B, 24(6), 2678, 2006
7 Surface segregation of photoresist copolymers containing polyhedral oligomeric silsesquioxanes studied by x-ray photoelectron spectroscopy
Eon D, Cartry G, Fernandez V, Cardinaud C, Tegou E, Bellas V, Argitis P, Gogolides E
Journal of Vacuum Science & Technology B, 22(5), 2526, 2004
8 Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
Tserepi A, Cordoyiannis G, Patsis GP, Constantoudis V, Gogolides E, Valamontes ES, Eon D, Peignon MC, Cartry G, Cardinaud C, Turban G
Journal of Vacuum Science & Technology B, 21(1), 174, 2003
9 Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2
Gaboriau F, Peignon MC, Cartry G, Rolland L, Eon D, Cardinaud C, Turban G
Journal of Vacuum Science & Technology A, 20(3), 919, 2002