1 |
Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors Kuo WC, Lee MJ, Wu ML, Lee CC, Tsao IY, Chang JY Solid-State Electronics, 130, 41, 2017 |
2 |
Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories Mateos D, Diniz JA, Nedev N, Munoz SNM, Curiel M, Mederos M, Valdez B, Montero G Thin Solid Films, 628, 96, 2017 |
3 |
Low temperature growth of highly conductive boron-doped germanium thin films by electron cyclotron resonance chemical vapor deposition Chang TH, Chang C, Chu YH, Lee CC, Chang JY, Chen IC, Li T Thin Solid Films, 551, 53, 2014 |
4 |
Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films Hu LC, Ruan GM, Wei TC, Wang CJ, Lin YW, Lee CC, Kawai Y, Li TT Thin Solid Films, 570, 574, 2014 |
5 |
Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron-cyclotron resonance chemical vapor deposition Rau B, Sieber I, Schneider J, Muske M, Stoger-Pollach M, Schattschneider P, Gall S, Fuhs W Journal of Crystal Growth, 270(3-4), 396, 2004 |
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Growth characterization and properties of diamond-like carbon films by electron cyclotron resonance chemical vapor deposition Lung BH, Chiang MJ, Hon MH Thin Solid Films, 392(1), 16, 2001 |
7 |
Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD Zhang DH, Gao Y, Wei J, Mo ZQ Thin Solid Films, 377-378, 607, 2000 |
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Optical properties of diamond-like carbon synthesized by plasma immersion ion processing He XM, Bardeau JF, Lee DH, Walter KC, Tuszewski M, Nastasi M Journal of Vacuum Science & Technology B, 17(2), 822, 1999 |
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A novel approach to the formation of amorphous carbon nitride film on silicon by ECR-CVD Sung SL, Tseng CH, Chiang FK, Guo XJ, Liu XW, Shih HC Thin Solid Films, 340(1-2), 169, 1999 |
10 |
ECR플라즈마를 이용한 화학증착법에 의해 제조된 실리콘 산화막의 특성 전법주, 오인환, 임태훈, 정일현 HWAHAK KONGHAK, 35(3), 374, 1997 |