| 1 |
Thin films of relaxor ferroelectric/antiferroelectric heterolayered structure for energy storage
Nguyen MD, Rijnders G
Thin Solid Films, 659, 89, 2018 |
| 2 |
Self-assembly and electrical characteristics of 4-pentynoic acid functionalized Fe3O4-gamma-Fe2O3 nanoparticles on SiO2/n-Si
Baharuddin AA, Ang BC, Wong YH
Applied Surface Science, 423, 236, 2017 |
| 3 |
Mechanical induced electrical failure of shock compressed PZT95/5 ferroelectric ceramics
Nie HC, Yang J, Chen XF, Zhang FP, Yu Y, Wang GS, Liu YS, He HL, Dong XL
Current Applied Physics, 17(4), 448, 2017 |
| 4 |
Scanning Tunneling Microscopy Study of the Multi-Step Deposited and Annealed HfSiOx Gate Dielectric
Yew KS, Ang DS, Tang LJ, Cui K, Bersuker G, Lysaght PS
Journal of the Electrochemical Society, 158(10), H1021, 2011 |
| 5 |
Measurement of particle size distribution of silica nanoparticles by interactive force apparatus under an electric field
Otsuki A, Dodbiba G, Fujita T
Advanced Powder Technology, 21(4), 419, 2010 |
| 6 |
Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O-3 Oxidant Generated Without N-2 Assistance
Park TJ, Chung KJ, Kim HC, Ahn J, Wallace RM, Kim J
Electrochemical and Solid State Letters, 13(8), G65, 2010 |
| 7 |
A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
Mikhelashvili V, Meyler B, Yofis S, Salzman J, Garbrecht M, Cohen-Hyams T, Kaplan WD, Eisenstein G
Journal of the Electrochemical Society, 157(4), H463, 2010 |
| 8 |
Ultralow-k/Cu Damascene Multilevel Interconnects Using High Porosity and High Modulus Self-Assembled Porous Silica
Chikaki S, Kinoshita K, Kohmura K, Tanaka H, Soda E, Suzuki T, Seino Y, Hata N, Saito S, Kikkawa T
Journal of the Electrochemical Society, 157(5), H519, 2010 |
| 9 |
Configuration-dependent enhancements of electric fields near the quadruple and the triple junction
Chung MS, Yoon BG, Cutler PH, Miskovsky NM, Weiss BL, Mayer A
Journal of Vacuum Science & Technology B, 28(2), C2A94, 2010 |
| 10 |
Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition
Cheng YL, Chen SA, Chiu TJ, Wu J, Wei BJ, Chang HJ
Journal of Vacuum Science & Technology B, 28(3), 573, 2010 |
