검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes Hoffmann V, Mogilatenko A, Netzel C, Zeimer U, Einfeldt S, Weyers M, Kneissl M Journal of Crystal Growth, 391, 46, 2014 |
| 2 |
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate Hoffmann V, Knauer A, Brunner C, Einfeldt S, Weyers M, Trankle G, Haberland K, Zettler JT, Kneissl M Journal of Crystal Growth, 315(1), 5, 2011 |
| 3 |
Well width study of InGaN multiple quantum wells for blue-green emitter Hoffmann V, Netzel C, Zeimer U, Knauer A, Einfeldt S, Bertram F, Christen J, Weyers M, Trankle G, Kneissl M Journal of Crystal Growth, 312(23), 3428, 2010 |
| 4 |
Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes Hoffmann V, Knauer A, Brunner F, Netzel C, Zeimer U, Einfeldt S, Weyers M, Trankle G, Karaliunas JM, Kazlauskas K, Jursenas S, Jahn U, van Look JR, Kneissl M Journal of Crystal Growth, 310(21), 4525, 2008 |
| 5 |
Formation and morphology of InGaN nanoisiands on GaN(0001) Gangopadhyay S, Schmidt T, Einfeldt S, Yamaguchi T, Hommel D, Falta J Journal of Vacuum Science & Technology B, 25(3), 791, 2007 |
| 6 |
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures Miraglia PQ, Preble EA, Roskowski AM, Einfeldt S, Davis RF Journal of Crystal Growth, 253(1-4), 16, 2003 |
| 7 |
Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers Einfeldt S, Reitmeier ZJ, Davis RF Journal of Crystal Growth, 253(1-4), 129, 2003 |
| 8 |
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures Miraglia PQ, Preble EA, Roskowski AM, Einfeldt S, Lim SH, Liliental-Weber Z, Davis RF Thin Solid Films, 437(1-2), 140, 2003 |
| 9 |
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE Roskowski AM, Miraglia PQ, Preble EA, Einfeldt S, Davis RF Journal of Crystal Growth, 241(1-2), 141, 2002 |
| 10 |
Thermally induced stress in GaN layers with regard to film coalescence Einfeldt S, Bottcher T, Figge S, Hommel D Journal of Crystal Growth, 230(3-4), 357, 2001 |