화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation
Ee YC, Chen Z, Law SB, Xu S, Yakovlev NL, Lai MY
Applied Surface Science, 253(2), 530, 2006
2 Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films
Ee YC, Chen Z, Lu TM, Dong ZL, Law SB
Electrochemical and Solid State Letters, 9(3), G100, 2006
3 Bias-temperature stability of Ti-Si-N-O films
Ee YC, Juneja JS, Wang PI, Lu TM, Bakhru H, Chan L, Law SB, Yong C, Chen Z, Xu S
Journal of the Electrochemical Society, 153(5), G470, 2006
4 Formation and characterization of Ti-Si-N-O barrier films
Ee YC, Chen Z, Law SB, Xu S
Thin Solid Films, 504(1-2), 218, 2006
5 Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process
Ee YC, Chen Z, Chan L, See KH, Law SB, Xu S, Tsakadze ZL, Rutkevych PP, Zeng KY, Shen L
Journal of Vacuum Science & Technology B, 23(6), 2444, 2005
6 Electroless copper deposition as a seed layer on TiSiN barrier
Ee YC, Chen Z, Xu S, Chan L, See KH, Law SB
Journal of Vacuum Science & Technology A, 22(4), 1852, 2004
7 Effect of processing parameters on electroless Cu seed layer properties
Ee YC, Chen Z, Chan L, See AKH, Law SB, Tee KC, Zeng KY, Shen L
Thin Solid Films, 462-63, 197, 2004