화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
Johnson MAL, Brown JD, El-Masry NA, Cook JW, Schetzina JF, Kong HS, Edmond JA
Journal of Vacuum Science & Technology B, 16(3), 1282, 1998
2 Molecular-Beam Epitaxy Growth and Properties of GaN, AlxGa1-Xn, and AlN on GaN/SiC Substrates
Johnson MA, Fujita S, Rowland WH, Bowers KA, Hughes WC, He YW, Elmasry NA, Cook JW, Schetzina JF, Ren J, Edmond JA
Journal of Vacuum Science & Technology B, 14(3), 2349, 1996
3 Molecular-Beam Epitaxy Growth and Properties of GaN Films on GaN/SiC Substrates
Hughes WC, Rowland WH, Johnson MA, Fujita S, Cook JW, Schetzina JF, Ren J, Edmond JA
Journal of Vacuum Science & Technology B, 13(4), 1571, 1995