화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H
Solid-State Electronics, 51(4), 617, 2007
2 Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics
Gottlob HDB, Mollenhauer T, Wahlbrink T, Schmidt M, Echtermeyer T, Efavi JK, Lemme MC, Kurz H
Journal of Vacuum Science & Technology B, 24(2), 710, 2006
3 CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T, Lemme MC, Kurz H, Czernohorsky M, Bugiel E, Osten HJ, Fissel A
Solid-State Electronics, 50(6), 979, 2006