1 |
Carbon contamination of EUV mask and its effect on CD performance Lee S, Doh JG, Lee JU, Lee I, Jeong CY, Lee DG, Rah SY, Ahn J Current Applied Physics, 11(4), S107, 2011 |
2 |
Nanoparticle Adhesion Models: Applications in Particulate Contaminant Removal from Extreme Ultraviolet Lithography Photomasks Jaiswal RP, Beaudoin SP Journal of Adhesion Science and Technology, 25(8), 781, 2011 |
3 |
Study on contamination of projection optics surface for extreme ultraviolet lithography Koida K, Niibe M Applied Surface Science, 256(4), 1171, 2009 |
4 |
Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP) Jung HY, Park YR, Lee HJ, Lee NE, Jeong CY, Ahn J Thin Solid Films, 517(14), 3938, 2009 |
5 |
Evaluation of protection schemes for extreme ultraviolet lithography (EUVL) masks against top-down aerosol flow Yook SJ, Fissan H, Asbach C, Kim JH, Wang J, Yan PY, Pui DYH Journal of Aerosol Science, 38(2), 211, 2007 |