화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
Das S, Khiangte KR, Fandan RS, Rathore JS, Pokharia RS, Mahapatra S, Laha A
Current Applied Physics, 17(3), 327, 2017
2 Atomic-Level Investigation of the Growth of Si/Ge by Ultrahigh-Vacuum Chemical-Vapor-Deposition
Lin DS, Miller T, Chiang TC
Journal of Vacuum Science & Technology A, 15(3), 919, 1997
3 A kinetic model for photochemical vapor deposition from germane and silane
Tao M
Thin Solid Films, 307(1-2), 71, 1997
4 Synchrotron-Radiation X-Ray Photoelectron-Spectroscopy Study of Hydrogen-Terminated Si Surfaces and Their Oxidation Mechanism
Yamamoto K, Hasegawa M
Journal of Vacuum Science & Technology B, 12(4), 2493, 1994