검색결과 : 4건
No. | Article |
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1 |
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy Das S, Khiangte KR, Fandan RS, Rathore JS, Pokharia RS, Mahapatra S, Laha A Current Applied Physics, 17(3), 327, 2017 |
2 |
Atomic-Level Investigation of the Growth of Si/Ge by Ultrahigh-Vacuum Chemical-Vapor-Deposition Lin DS, Miller T, Chiang TC Journal of Vacuum Science & Technology A, 15(3), 919, 1997 |
3 |
A kinetic model for photochemical vapor deposition from germane and silane Tao M Thin Solid Films, 307(1-2), 71, 1997 |
4 |
Synchrotron-Radiation X-Ray Photoelectron-Spectroscopy Study of Hydrogen-Terminated Si Surfaces and Their Oxidation Mechanism Yamamoto K, Hasegawa M Journal of Vacuum Science & Technology B, 12(4), 2493, 1994 |