| 1 |
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
Aziz M, Mesli A, Felix JF, Jameel D, Al Saqri N, Taylor D, Henini M
Journal of Crystal Growth, 424, 5, 2015 |
| 2 |
Transport properties in semiconductor-gas discharge electronic devices
Sadiq Y, Kurt H, Albarzanji AO, Alekperov SD, Salamov BG
Solid-State Electronics, 53(9), 1009, 2009 |
| 3 |
Changes in the positron-electron momentum distribution in GaAs brought about by chopped light
Li S, Fung S, Beling CD, Ling CC
Materials Science Forum, 363-3, 114, 2001 |
| 4 |
Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method
Tsia M, Fung S, Beling CD
Materials Science Forum, 363-3, 117, 2001 |
| 5 |
Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements
Fukuyama A, Akashi Y, Suemitsu M, Ikari T
Journal of Crystal Growth, 210(1-3), 255, 2000 |
| 6 |
Schottky-Barrier Study of Ion-Implantation Damage in GaAs
Wang YG, Ashok S
Journal of Vacuum Science & Technology B, 12(4), 2280, 1994 |
