| 1 |
Magnetic properties of Co-N films deposited by ECR nitrogen/argon plasma with DC negative-biased Co target
Li H, Zhang YC, Yang K, Liu HX, Zhu XD, Zhou HY
Applied Surface Science, 406, 110, 2017 |
| 2 |
Surface modification of vertically aligned graphene nanosheets by microwave assisted etching for application as anode of lithium ion battery
Ghosh M, Venkatesh G, Rao GM
Solid State Ionics, 296, 31, 2016 |
| 3 |
Etching of CVD diamond films using oxygen ions in ECR plasma
Ma ZB, Wu J, Shen WL, Yan L, Pan X, Wang JH
Applied Surface Science, 289, 533, 2014 |
| 4 |
Deposition of a Continuous and Conformal Copper Seed Layer by a Large-Area Electron Cyclotron Resonance Plasma Source with Embedded Lisitano Antenna
Jang SO, You HJ, Kim YW, Jung YH, Hwang IU, Park JY, Lee H
Plasma Chemistry and Plasma Processing, 34(1), 229, 2014 |
| 5 |
Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering
Akazawa H, Ueno Y
Applied Surface Science, 276, 217, 2013 |
| 6 |
Synthesis of free standing carbon nanosheet using electron cyclotron resonance plasma enhanced chemical vapor deposition
Thomas R, Rao GM
Applied Surface Science, 258(11), 4877, 2012 |
| 7 |
Dissociative Excitation of C2H2 in the Electron Cyclotron Resonance Plasma of Ar: Production of CH(A(2)Delta) Radicals and Formation of Hydrogenated Amorphous Carbon Films
Ito H, Koshimura K, Onitsuka S, Okada K, Suzuki T, Akasaka H, Saitoh H
Plasma Chemistry and Plasma Processing, 32(2), 231, 2012 |
| 8 |
Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD
Barve SA, Jagannath, Deo MN, Kishore R, Biswas A, Gantayet LM, Patil DS
Applied Surface Science, 257(1), 215, 2010 |
| 9 |
Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating
Sugawara K, Sakuraba M, Murota J
Thin Solid Films, 518, S57, 2010 |
| 10 |
Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers
Hirayama K, Kira W, Yoshino K, Yang HG, Wang D, Nakashima H
Thin Solid Films, 518(9), 2505, 2010 |
