화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Heavily carbon-doped GaAsSb grown on InP for HBT applications
Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR
Journal of Crystal Growth, 221, 59, 2000
2 Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
Dvorak MW, Matine N, Bolognesi CR, Xu XG, Watkins SP
Journal of Vacuum Science & Technology A, 18(2), 761, 2000
3 InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier
Bolognesi CR, Dvorak MW, Chow DH
Journal of Vacuum Science & Technology A, 16(2), 843, 1998