1 |
Deposition of tin oxide, iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment Klamklang S, Vergnes H, Senocq F, Pruksathorn K, Duverneuil P, Damronglerd S Journal of Applied Electrochemistry, 40(5), 997, 2010 |
2 |
Behaviour, modelling and simulation of a pulsed three-dimensional radial electrode with continuous solid flow: Part I Garfias-Vasquez FJ, Duverneuil P, Lacoste G Journal of Applied Electrochemistry, 34(4), 417, 2004 |
3 |
A new technology for chemical vapor deposition reactors. Part One: Presentation and analysis of experimental results Vergnes H, Duverneuil P, Couderc JP Canadian Journal of Chemical Engineering, 78(4), 793, 2000 |
4 |
new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon Vergnes H, Duverneuil P, Couderc JP Canadian Journal of Chemical Engineering, 78(4), 803, 2000 |
5 |
Simulation of silicon deposition from SiHCl3 in a CVD barrel reactor at atmospheric pressure De Paola E, Duverneuil P Computers & Chemical Engineering, 22(S), 683, 1998 |
6 |
Using CFD to understand the air circulation in a ventilated room Espi E, Berne P, Duverneuil P Computers & Chemical Engineering, 22(S), 751, 1998 |
7 |
Application of an electrochemical pulsed flow reactor to electroorganic synthesis Part II : Oxidation of cyclohexanol and pilot plant operation Roquero P, Cognet P, Duverneuil P, Lacoste G, Fabre PL Journal of Applied Electrochemistry, 28(5), 475, 1998 |
8 |
Chemical-Vapor-Deposition of Silicon Doped in-Situ with Phosphorus .1. Experimental-Study Tounsi A, Scheid E, Duverneuil P, Couderc JF Canadian Journal of Chemical Engineering, 74(6), 941, 1996 |
9 |
Chemical-Vapor-Deposition of Silicon Doped in-Situ with Phosphorus .2. Theoretical-Analysis and Modeling Tounsi A, Scheid E, Duverneuil P, Couderc JP Canadian Journal of Chemical Engineering, 74(6), 950, 1996 |
10 |
A New Reactor for Industrial Organic Electrosynthesis Roquero P, Ghanemlakhal A, Cognet P, Lacoste G, Berlan J, Fabre PL, Duverneuil P Chemical Engineering Science, 51(10), 1847, 1996 |