화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Deposition of tin oxide, iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment
Klamklang S, Vergnes H, Senocq F, Pruksathorn K, Duverneuil P, Damronglerd S
Journal of Applied Electrochemistry, 40(5), 997, 2010
2 Behaviour, modelling and simulation of a pulsed three-dimensional radial electrode with continuous solid flow: Part I
Garfias-Vasquez FJ, Duverneuil P, Lacoste G
Journal of Applied Electrochemistry, 34(4), 417, 2004
3 A new technology for chemical vapor deposition reactors. Part One: Presentation and analysis of experimental results
Vergnes H, Duverneuil P, Couderc JP
Canadian Journal of Chemical Engineering, 78(4), 793, 2000
4 new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon
Vergnes H, Duverneuil P, Couderc JP
Canadian Journal of Chemical Engineering, 78(4), 803, 2000
5 Simulation of silicon deposition from SiHCl3 in a CVD barrel reactor at atmospheric pressure
De Paola E, Duverneuil P
Computers & Chemical Engineering, 22(S), 683, 1998
6 Using CFD to understand the air circulation in a ventilated room
Espi E, Berne P, Duverneuil P
Computers & Chemical Engineering, 22(S), 751, 1998
7 Application of an electrochemical pulsed flow reactor to electroorganic synthesis Part II : Oxidation of cyclohexanol and pilot plant operation
Roquero P, Cognet P, Duverneuil P, Lacoste G, Fabre PL
Journal of Applied Electrochemistry, 28(5), 475, 1998
8 Chemical-Vapor-Deposition of Silicon Doped in-Situ with Phosphorus .1. Experimental-Study
Tounsi A, Scheid E, Duverneuil P, Couderc JF
Canadian Journal of Chemical Engineering, 74(6), 941, 1996
9 Chemical-Vapor-Deposition of Silicon Doped in-Situ with Phosphorus .2. Theoretical-Analysis and Modeling
Tounsi A, Scheid E, Duverneuil P, Couderc JP
Canadian Journal of Chemical Engineering, 74(6), 950, 1996
10 A New Reactor for Industrial Organic Electrosynthesis
Roquero P, Ghanemlakhal A, Cognet P, Lacoste G, Berlan J, Fabre PL, Duverneuil P
Chemical Engineering Science, 51(10), 1847, 1996