검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy Dussaigne A, Malinverni M, Martin D, Castiglia A, Grandjean N Journal of Crystal Growth, 311(21), 4539, 2009 |
| 2 |
Dynamics of AlGaN based detectors in the deep-UV Mazzeo G, Reverchon JL, Conte G, Dussaigne A, Duboz JY Solid-State Electronics, 52(5), 795, 2008 |
| 3 |
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy Potin V, Hahn E, Rosenauer A, Gerthsen D, Kuhn B, Scholz F, Dussaigne A, Damilano B, Grandjean N Journal of Crystal Growth, 262(1-4), 145, 2004 |
| 4 |
Control of the polarity of GaN films using an Mg adsorption layer Grandjean N, Dussaigne A, Pezzagna S, Vennegues P Journal of Crystal Growth, 251(1-4), 460, 2003 |
| 5 |
In surface segregation in InGaN/GaN quantum wells Dussaigne A, Damilano B, Grandjean N, Massies J Journal of Crystal Growth, 251(1-4), 471, 2003 |