| 1 |
Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method
Dubois C, Prudon G, Gautier B, Dupuy JC
Applied Surface Science, 255(4), 1377, 2008 |
| 2 |
Deconvolution of SIMS depth profiles: Towards simple and faster techniques
Boulsina F, Berrabah M, Dupuy JC
Applied Surface Science, 255(5), 1946, 2008 |
| 3 |
AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size
Fares B, Dubois C, Gautier B, Dupuy JC, Cayrel F, Gaudin G
Applied Surface Science, 252(19), 6448, 2006 |
| 4 |
Deconvolution of very low primary energy SIMS depth profiles2w
Fares B, Gautier B, Dupuy JC, Prudon G, Holliger P
Applied Surface Science, 252(19), 6478, 2006 |
| 5 |
Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O-2(+) bombardment
Fares B, Gautier B, Holliger P, Baboux N, Prudon G, Dupuy JC
Applied Surface Science, 253(5), 2662, 2006 |
| 6 |
Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon
Gautier B, Fares B, Prudon G, Dupuy JC
Applied Surface Science, 231-2, 136, 2004 |
| 7 |
Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments
Laugier F, Hartmann JM, Moriceau H, Holliger P, Truche R, Dupuy JC
Applied Surface Science, 231-2, 668, 2004 |
| 8 |
Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon
Fares B, Gautier B, Baboux N, Prudon G, Holliger P, Dupuy JC
Applied Surface Science, 231-2, 678, 2004 |
| 9 |
Comparison between Xe+ and O-2(+) primary ions, at low impact energy, on B delta-doping, SiGe-Si superlattice and Al/Ti multilayer structures
Laugier F, Holliger P, Dupuy JC, Baboux N
Applied Surface Science, 203, 348, 2003 |
| 10 |
Ultra-low energy SIMS analysis of boron deltas in silicon
Baboux N, Dupuy JC, Prudon G, Holliger P, Laugier F, Papon AM, Hartmann JM
Journal of Crystal Growth, 245(1-2), 1, 2002 |
