화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Role of the substrate during pseudo-MOSFET drain current transients
Park K, Nayak P, Schroder DK
Solid-State Electronics, 54(3), 316, 2010
2 Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs
Rafi JM, Simoen E, Mercha A, Collaert N, Hayama K, Campabadal F, Claeys C
Solid-State Electronics, 51(9), 1201, 2007
3 Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs
Rafi JM, Simoen E, Mercha A, Campabadal F, Claeys C
Solid-State Electronics, 49(9), 1536, 2005
4 Impact of gate tunneling floating-body charging on drain current transients of 0.10 mu m-CMOS partially depleted SOI MOSFETs
Rafi JM, Mercha A, Simoen E, Claeys C
Solid-State Electronics, 48(7), 1211, 2004