| 1 |
Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
Lee SH, Kwon DW, Kim S, Baek MH, Lee S, Kang J, Jang W, Park BG
Solid-State Electronics, 152, 41, 2019 |
| 2 |
Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique
Qiang L, Liang XC, Cai GS, Pei YL, Yao RH, Wang G
Solid-State Electronics, 144, 22, 2018 |
| 3 |
A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
Cai MX, Yao RH
Solid-State Electronics, 141, 23, 2018 |
| 4 |
Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor
Itoh T, Toyota T, Higuchi H, Matsushita MM, Suzuki K, Sugawara T
Chemical Physics Letters, 671, 71, 2017 |
| 5 |
Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression
Singh K, Bhattacharyya AB
Solid-State Electronics, 129, 188, 2017 |
| 6 |
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Lime F, Avila-Herrera F, Cerdeira A, Iniguez B
Solid-State Electronics, 131, 24, 2017 |
| 7 |
Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
Estrada M, Hernandez-Barrios Y, Cerdeira A, Avila-Herrera F, Tinoco J, Moldovan O, Lime F, Iniguez B
Solid-State Electronics, 135, 43, 2017 |
| 8 |
A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime
Yu F, Ma XY, Deng WL, Liou JJ, Huang JK
Solid-State Electronics, 137, 38, 2017 |
| 9 |
A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands
Deng WL, Huang JK, Ma XY, Liou JJ, Yu F
Solid-State Electronics, 115, 54, 2016 |
| 10 |
Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs
Ioannidis EG, Haendler S, Josse E, Planes N, Ghibaudo G
Solid-State Electronics, 118, 4, 2016 |
