검색결과 : 2건
No. | Article |
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1 |
Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si Vulpe S, Nastase F, Dragoman M, Dinescu A, Romanitan C, Iftimie S, Moldovan A, Apostol N Applied Surface Science, 483, 324, 2019 |
2 |
Extending ballistic graphene FET lumped element models to diffusive devices Vincenzi G, Deligeorgis G, Coccetti F, Dragoman M, Pierantoni L, Mencarelli D, Plana R Solid-State Electronics, 76, 8, 2012 |