화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si
Vulpe S, Nastase F, Dragoman M, Dinescu A, Romanitan C, Iftimie S, Moldovan A, Apostol N
Applied Surface Science, 483, 324, 2019
2 Extending ballistic graphene FET lumped element models to diffusive devices
Vincenzi G, Deligeorgis G, Coccetti F, Dragoman M, Pierantoni L, Mencarelli D, Plana R
Solid-State Electronics, 76, 8, 2012