검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n plus InAs(Si)/p plus GaSb(Si) Esaki diode El Kazzi S, Alian A, Hsu B, Verhulst AS, Walke A, Favia P, Douhard B, Lu W, del Alamo JA, Collaert N, Merckling C Journal of Crystal Growth, 484, 86, 2018 |
| 2 |
Self Focusing SIMS: Probing thin film composition in very confined volumes Franquet A, Douhard B, Melkonyan D, Favia P, Conard T, Vandervorst W Applied Surface Science, 365, 143, 2016 |
| 3 |
Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure Jayachandran S, Billen A, Douhard B, Conard T, Meersschaut J, Moussa A, Caymax M, Bender H, Vandervorst W, Heyns M, Delabie A Applied Surface Science, 384, 152, 2016 |
| 4 |
Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry Jayachandran S, Delabie A, Billen A, Dekkers H, Douhard B, Conard T, Meersschaut J, Caymax M, Vandervorst W, Heyns M Applied Surface Science, 324, 251, 2015 |
| 5 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A Journal of Crystal Growth, 424, 62, 2015 |
| 6 |
Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts Vincent B, Firrincieli A, Wang WE, Waldron N, Franquet A, Douhard B, Vandervorst W, Clarysse T, Brammertz G, Loo R, Dekoster J, Meuris M, Caymax M Journal of the Electrochemical Society, 158(3), H203, 2011 |
| 7 |
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M Solid-State Electronics, 60(1), 116, 2011 |
| 8 |
Evidence of covalent bond formation at the silane-metal interface during plasma polymerization of bis-1,2-(triethoxysilyl)ethane (BTSE) on aluminium Batan A, Mine N, Douhard B, Brusciotti F, De Graeve I, Vereecken J, Wenkin M, Piens M, Terryn H, Pireaux JJ, Reniers F Chemical Physics Letters, 493(1-3), 107, 2010 |
| 9 |
The Storing Matter technique: Preliminary results on PS and PVC Philipp P, Douhard B, Lacour F, Wirtz T, Houssiau L, Pireaux JJ, Migeon HN Applied Surface Science, 255(4), 866, 2008 |
| 10 |
Molecular depth profiling of polymers with very low energy ions Houssiau L, Douhard B, Mine N Applied Surface Science, 255(4), 970, 2008 |